 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5A 740 m Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C Maximum Ratings 600 600 30 40 5 30 10 20 500 10 50 -55 ... +150 150 -55 ... +150 V V V V OVERMOLDED TO-220 (IXTP...M) OUTLINE G A A A mJ mJ V/ns W C C C C C Isolated Tab DS G = Gate S = Source D = Drain Features Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 1.13/10 Nm/lb.in. 4 g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 100A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.0 100 5 50 V V nA A A VGS = 10 V, ID = 5 A Pulse test, t 300 s, duty cycle d 2 % 740 m (c) 2006 IXYS All rights reserved DS99450E(04/06) IXTP 10N60PM Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 6 11 1610 VGS = 0 V, VDS = 25 V, f = 1 MHz 165 14 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A RG = 10 (External) 24 55 18 32 VGS= 10 V, VDS = 0.5 VDSS, ID = 5 A 11 10 2.5 S pF pF pF ns ns ns ns nC nC nC C/W Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 1 2 3 ISOLATED TO-220 (IXTP...M) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJS VDS= 10 V; ID = 5 A, pulse test Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 10 30 1.5 A A V IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 9 A, -di/dt = 100 A/s VR = 100V 500 ns PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 |
Price & Availability of IXTP10N60PM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |